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Proc-Type: 2001,MIC-CLEAR
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<SEC-DOCUMENT>0000947871-04-002552.txt : 20041117
<SEC-HEADER>0000947871-04-002552.hdr.sgml : 20041117
<ACCEPTANCE-DATETIME>20041117095109
ACCESSION NUMBER:		0000947871-04-002552
CONFORMED SUBMISSION TYPE:	6-K
PUBLIC DOCUMENT COUNT:		3
CONFORMED PERIOD OF REPORT:	20041117
FILED AS OF DATE:		20041117
DATE AS OF CHANGE:		20041117

FILER:

	COMPANY DATA:	
		COMPANY CONFORMED NAME:			STMICROELECTRONICS NV
		CENTRAL INDEX KEY:			0000932787
		STANDARD INDUSTRIAL CLASSIFICATION:	SEMICONDUCTORS & RELATED DEVICES [3674]
		IRS NUMBER:				000000000
		STATE OF INCORPORATION:			P7
		FISCAL YEAR END:			1231

	FILING VALUES:
		FORM TYPE:		6-K
		SEC ACT:		1934 Act
		SEC FILE NUMBER:	001-13546
		FILM NUMBER:		041150986

	BUSINESS ADDRESS:	
		STREET 1:		39 CHEMIN DU CHAMP DES FILLES
		STREET 2:		1228 PLAN-LES-OUATES
		CITY:			GENEVA
		STATE:			V8
		ZIP:			00000
		BUSINESS PHONE:		011 41 22 929 2929

	MAIL ADDRESS:	
		STREET 1:		39 CHEMIN DU CHAMP DES FILLES
		STREET 2:		1228 PLAN-LES-OUATES
		CITY:			GENEVA
		STATE:			V8
		ZIP:			00000

	FORMER COMPANY:	
		FORMER CONFORMED NAME:	SGS THOMSON MICROELECTRONICS NV
		DATE OF NAME CHANGE:	19950310
</SEC-HEADER>
<DOCUMENT>
<TYPE>6-K
<SEQUENCE>1
<FILENAME>f6k_111604.htm
<DESCRIPTION>REPORT OF FOREIGN PRIVATE ISSUER
<TEXT>
<HTML>
<HEAD>
<TITLE>Form 6-K</TITLE>
</HEAD>
<BODY>

<!-- MARKER FORMAT-SHEET="Head Major Center Bold 1-TNR" FSL="Project" -->
<H1 ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>SECURITIES AND
EXCHANGE COMMISSION </FONT></H1>

<!-- MARKER FORMAT-SHEET="Head Major Center Bold 1-TNR" FSL="Project" -->
<H1 ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Washington, D.C. 20549 </FONT></H1>

<!-- MARKER FORMAT-SHEET="Head Major Center Bold-TNR" FSL="Project" -->
<H1 ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>FORM 6-K </FONT></H1>

<!-- MARKER FORMAT-SHEET="Head Major Center Bold-TNR" FSL="Project" -->
<H1 ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>REPORT OF FOREIGN
PRIVATE ISSUER <BR>PURSUANT TO RULE 13a-16 or 15d-16 OF <BR>THE SECURITIES
EXCHANGE ACT OF 1934 </FONT></H1>

<!-- MARKER FORMAT-SHEET="Head Major Center Bold 1-TNR" FSL="Default" -->
<H1 ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Report on Form 6-K
dated November 17, 2004 </FONT></H1>

<HR WIDTH="100" SIZE="2" ALIGN="Center" COLOR="Black" NOSHADE="Noshade">

<!-- MARKER FORMAT-SHEET="Head Minor Center-TNR" FSL="Project" -->
<P ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3><B>STMicroelectronics N.V.</B> <BR>(Name of Registrant) </FONT></P>

<!-- MARKER FORMAT-SHEET="Head Minor Center-TNR" FSL="Project" -->
<P ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=2>39, Chemin du
Champ-des-Filles <BR>1228 Plan-les-Ouates, Geneva, Switzerland </FONT></P>

<!-- MARKER FORMAT-SHEET="Head Minor Center-TNR" FSL="Default" -->
<P ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>(Address of Principal Executive
Offices) </FONT></P>

<HR WIDTH="100" SIZE="2" ALIGN="Center" COLOR="Black" NOSHADE="Noshade">

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Project" -->
<P ALIGN="Center"><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Indicate by check mark whether the
registrant files or will file annual reports under cover of Form&nbsp;20-F or Form 40-F.  </FONT></P>

<!-- MARKER FORMAT-SHEET="Head Minor Center-TNR" FSL="Project" -->
<P ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Form 20-F <U>X</U> &nbsp;&nbsp;&nbsp;&nbsp;Form 40-F __ </FONT></P>

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Default" -->
<P><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Indicate by check mark if the
registrant is submitting the Form 6-K in paper as permitted by Regulation S-T Rule
101(b)(7): </FONT></P>

<!-- MARKER FORMAT-SHEET="Head Minor Center-TNR" FSL="Project" -->
<P ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Yes __&nbsp;&nbsp;&nbsp;&nbsp;No <U>X</U> </FONT></P>

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Project" -->
<P><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Indicate by check mark whether the
registrant by furnishing the information contained in this form is also thereby furnishing
the information to the Commission pursuant to Rule 12g3-2(b) under the Securities Exchange
Act of 1934. </FONT></P>

<!-- MARKER FORMAT-SHEET="Head Minor Center-TNR" FSL="Project" -->
<P ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Yes __&nbsp;&nbsp;&nbsp;&nbsp;No <U>X</U> </FONT></P>

<!-- MARKER FORMAT-SHEET="Para (List) Flush Lv 0- TNR" FSL="Project" -->
<P ALIGN="Center"><FONT FACE="Times New Roman, Times, Serif" SIZE=3>If&nbsp;&#147;Yes&#148; is
marked, indicate below the file number assigned to the registrant in connection with Rule
12g3-2(b): 82-__________  </FONT></P>

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Project" -->
<P><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Enclosures:  A press release dated
November 16, 2004 announcing that Hynix and STMicroelectronics have signed a joint-venture agreement to build
a front-end memory manufacturing plant in China.</FONT></P>
<!-- MARKER FORMAT-SHEET="Para (List) Hang Lv 0-TNR" FSL="Project" -->

<!-- *************************************************************************** -->
<!-- MARKER PAGE="sheet: 2; page: 2" -->




<HR SIZE=5 COLOR=GRAY NOSHADE>


<CENTER><IMG SRC="stmicroelectronics.gif">&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;
&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;<IMG SRC="lynix.gif">
</CENTER>

<!-- MARKER FORMAT-SHEET="Head Left-TNR" FSL="Project" -->
<P ALIGN=LEFT><FONT FACE="Times New Roman, Times, Serif" SIZE=1>PR No. C1558H </FONT></P>

<!-- MARKER FORMAT-SHEET="Head Major Center Bold 1-TNR" FSL="Project" -->
<H1 ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=3>Hynix and STMicroelectronics
to Build World-Class Front-End Memory Manufacturing Plant in China</FONT></H1>

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Project" -->
<P ALIGN="Center"><FONT FACE="Times New Roman, Times, Serif" SIZE=2><I>Leading-edge facility, which will
include 8-in. and 12-in manufacturing lines,<BR>positions both companies to better serve their worldwide customer
base and more effectively penetrate the Chinese market </I></FONT></P>

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Project" -->
<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2><B>Geneva and Seoul - November 16, 2004</B>&nbsp;-&nbsp;
STMicroelectronics (NYSE: STM) and Hynix Semiconductor (Bloomberg: 000660 KS), among the world's largest
semiconductor manufacturers, announced today the signing of a joint-venture agreement to build a front-end
memory-manufacturing facility in Wuxi City, Jiangsu Province, China. To be dedicated to DRAM and NAND Flash
production, the new fab will be especially beneficial for Hynix's stable DRAM production growth and for ST to
build up its NAND Flash capacity. The joint venture is also a logical extension of the successful NAND Flash
process/product development and manufacturing relationship between the companies.
 </FONT></P>

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Project" -->
<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2>
Selected for its convenience and proximity to Shanghai, Wuxi City offers a skilled labor pool and a robust
infrastructure. Construction of the leading-edge fab, with a clean-room space of more than 18,000 square meters,
is slated to begin early in 2005. When complete, the fab will employ approximately 1,500 people and will
initially feature two manufacturing lines offering state-of-the-art technology:&nbsp;&nbsp;an 8-in. wafer line is scheduled
to begin volume production in 2006 while a 12-in. wafer line will begin volume production in 2007. Each line will
produce, at capacity, 20,000 wafers per month. This new fab will supplement the leading-edge capabilities of both
companies while providing both with highly cost-competitive manufacturing capacity and better access to the
rapidly growing Chinese market.</FONT></P>

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Project" -->
<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2>
The Chinese market is currently 14% of the worldwide semiconductor market and is expected to achieve a compound
annual growth rate of more than 20% between 2003 and 2008; already, China accounts for approximately US$1.5
billion of ST's sales. Thanks to ST's comprehensive Flash product portfolio (including 1-Gbyte NAND Flash ICs),
in particular for the Telecom market, ST's memory sales are growing rapidly in China. A significant portion of
Hynix's sales is from China, attributable to Hynix&#146;s strong brand power which has been built up over many years.
</FONT></P>

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Project" -->
<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2>&#147;This world-class fab contributes to positioning
ST as a complete solution provider, in particular in the Telecom
and Consumer markets, with its ability to offer memory, multimedia processor, and system solutions in single
packages. ST is showing not only its ability to offer complex system-on-chip and dedicated solutions, but also
leading-edge and cost-competitive products in volume to a wide customer base,&#148; said Carlo Bozotti,
Corporate Vice President of STMicroelectronics&#146; Memory Products Group.</FONT></P>

<!-- *************************************************************************** -->
<!-- MARKER PAGE="sheet: 3; page: 3" -->
<HR SIZE=5 COLOR=GRAY NOSHADE>

<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2>&#147;With this agreement ST&#146;s
relationship with Hynix rises to a full-blown industrial partnership, encompassing
significant joint financial commitments,&#148; added Pasquale Pistorio, President
and CEO of STMicroelectronics.</FONT></P>

<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2>&#147;Hynix is glad to extend the
partnership with ST in building a world-class manufacturing plant in China . Hynix
believes this alliance will be mutually beneficial for each company&#146;s long-term growth.
Having completed its business restructuring through the sale of its non-memory
operations, and achieving record high profits in 2004, Hynix plans to extend its
position in the memory market with the planned fab in China and through diversifying
its product portfolio, which includes main memory for high-performance servers,
graphics memory, mobile memory, consumer-application memory, and NAND Flash memory,&#148;
said Eui-Jei Woo, Chairman and CEO of Hynix Semiconductor Inc.</FONT></P>

<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2>The joint-venture will strengthen
Hynix&#146;s competitiveness as the company will be able to secure 300mm
manufacturing facilities, and resolve the existing and potential trade issues.
The joint-venture also assures STMicroelectronics of access to cost-competitive
DRAM products and technology that ST can use in new designs and
have manufactured to suit particular customer requirements.</FONT></P>

<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2>The total investment planned
for the project is US$2 billion. It will be financed with equity from both partners
(Hynix 67%, ST 33%), US$250M of long-term debt from ST, as well as a financing package from Chinese local
financial institutions, which will involve debt and a long leasehold. ST and Hynix
are in the process of securing the required governmental approvals and financing package.
In 2005, the equity investment from ST and Hynix is expected to reach around US$375
million, split on a 1/3 - 2/3 basis.</FONT></P>

<!-- MARKER FORMAT-SHEET="Head Left-TNR" FSL="Project" -->
<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2><B>About Hynix Semiconductor Inc.</B><BR>
Hynix Semiconductor Inc. (&#147;HSI&#148;) of Ichon, Korea, is the world&#146;s top tier memory semiconductor supplier offering
Dynamic Random Access Memory chips (&#147;DRAMs&#148;), Static Random Access Memory chips (&#147;SRAMs&#148;), and Flash memory chips
to a wide range of established, international customers. The Company&#146;s shares are traded on the Korea Stock
Exchange, and the Global Depositary Shares are listed on the Luxembourg Stock Exchange. Further information about
Hynix is available at www.hynix.com. </FONT></P>

<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2><B>About STMicroelectronics</B><BR>
STMicroelectronics is a global leader in developing and delivering  semiconductor  solutions across the spectrum of
microelectronics  applications. An unrivalled combination of silicon and system expertise,  manufacturing strength,
Intellectual   Property  (IP)  portfolio  and  strategic  partners  positions  the  Company  at  the  forefront  of
System-on-Chip  (SoC)  technology and its products play a key role in enabling  today&#146;s  convergence  markets.  The
Company&#146;s shares are traded on the New York Stock Exchange,  on Euronext Paris and on the Milan Stock Exchange.  In
2003, the Company&#146;s net revenues were $7.24 billion and net earnings were $253 million.  Further  information on ST
can be found at www.st.com.</FONT>

<HR SIZE=5 COLOR=GRAY NOSHADE>

<!-- MARKER FORMAT-SHEET="Head Left-TNR" FSL="Project" -->
<P ALIGN=LEFT><FONT FACE="Times New Roman, Times, Serif" SIZE=2><B><I>Notes for Editors</I></B><BR></FONT>

<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2><I>NAND Flash and DRAM (Dynamic Random Access Memory) are two different kinds of semiconductor memories useful for
storing information in electronic products. DRAM, which is common in PCs, is a volatile memory whose ability to
save information depends on power continuously being applied to the memory. DRAMs, in conjunction with Flash
memories, are now becoming a key memory component in mobile terminals. In contrast, Flash memory is a type of
non-volatile memory. Flash is commonly used in digital applications, such as cellular phones and digital cameras,
which need to retain data, even when power is removed.</I></FONT></P>

<P ALIGN=JUSTIFY><FONT FACE="Times New Roman, Times, Serif" SIZE=2><I>Flash comes in two major flavors: NAND and NOR, which differ in process architecture and some of their
electrical and operational properties. Because NAND Flash has a faster programming throughput, it is better
suited to applications like digital cameras, where large quantities of image data need to be written quickly. In
contrast, NOR Flash, with its faster random read-access time, is better suited to applications where program data
occupies most of the memory space.</I></FONT></P>


<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Default" -->
<P><FONT FACE="Times New Roman, Times, Serif" SIZE=2><B>For further information, please
contact: </B></FONT></P>


<TABLE WIDTH="100%" BORDER="0" CELLPADDING="0" CELLSPACING="0">
<TR VALIGN="BOTTOM">
     <TH><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT></TH>
     <TH><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT></TH>
     <TH><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT></TH></TR>
<TR VALIGN="TOP">
     <TD WIDTH="34%"><FONT FACE="Times New Roman, Times, Serif" SIZE="2"><I>Media Relations</I></FONT></TD>
     <TD WIDTH="33%"><FONT FACE="Times New Roman, Times, Serif" SIZE="2"><I>Investor Relations</I></FONT></TD>
     <TD WIDTH="33%"><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT></TD></TR>
<TR>
      <TD> &nbsp;</TD>
      <TD> </TD>
      <TD> </TD></TR>
<TR VALIGN="TOP">
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Maria Grazia Prestini              <BR>
Director, Corporate Media Relations<BR>
<B>STMicroelectronics</B> <BR>
Tel: +41.22.929.6945
</FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Benoit de Leusse            <BR>
Director, Investor Relations<BR>
<B>STMicroelectronics</B> <BR>
Tel: +41.22.929.5812
</FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Fabrizio Rossini<BR>
Senior Manager, Investor Relations<BR>
<B>STMicroelectronics</B> <BR>
Tel: +41.22.929.6973
</FONT></TD></TR>
<TR>
      <TD> &nbsp;</TD>
      <TD> </TD>
      <TD> </TD></TR>
<TR VALIGN="TOP">
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Lorie Lichtlen / Nelly Dimey<BR>
<B>Financial Dynamics</B>          <BR>
Paris Tel: +33.1.47.03.68.10
</FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Nancy Levain<BR>
<B>LT Value</B><BR>
Tel: +33.01.55.27.15.88
</FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT></TD></TR>
</TABLE>


<!-- *************************************************************************** -->
<!-- MARKER PAGE="sheet: 4; page: 4" -->
<HR SIZE=5 COLOR=GRAY NOSHADE>

<!-- MARKER FORMAT-SHEET="Head Left-TNR" FSL="Project" -->
<P ALIGN=LEFT><FONT FACE="Times New Roman, Times, Serif" SIZE=2><B>For Hynix - </B> </FONT></P>

<!-- MARKER FORMAT-SHEET="Para (List) Flush Lv 0- TNR" FSL="Project" -->
<P><FONT FACE="Times New Roman, Times, Serif" SIZE=2><I>CORPORATE COMMUNICATIONS</I><BR>
Ah-Young Kim<BR>
Hynix Semiconductors<BR>
Manager, Corporate Communications<BR>
Phone: +82.2.3459.5355<BR>
Fax: +82.2.3459.5333<BR>
Email: ahyoung.kim@hynix.com  </FONT></P>

<TABLE CELLPADDING="0" CELLSPACING="0" WIDTH="95%">
<TR>
      <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2"><I>INVESTOR RELATIONS</I></FONT> </TD>
      <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT> </TD></TR>
<TR VALIGN="TOP">
     <TD WIDTH="34%" ALIGN="LEFT"><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Jungsoo (James) Kim<BR>Hynix Semiconductors<BR>Director, Investor Relations
<BR>Tel: +82.2.3459.5920<BR>Fax: +82.2.3459.3647<BR>Email: jamess.kim@hynix.com</FONT></TD>
     <TD WIDTH="33%" ALIGN="LEFT"><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Keunyook (Kevin) Lee<BR>Hynix Semiconductors<BR>Sr. Manager, Investor Relations
<BR>Tel: +82.2.3459.5532<BR>Fax: +82.2.3459.3647<BR>Email: Keunyook.lee@hynix.com</FONT></TD>
     <TD WIDTH="33%" ALIGN="LEFT"><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Mina Cho<BR>Hynix Semiconductors<BR>Manager, Investor Relations
<BR>Tel: +82.2.3459.3644<BR>Fax: +82.2.3459.3647<BR>Email: minacho@hynix.com</FONT></TD></TR>

</TABLE>

<P><FONT FACE="Times New Roman, Times, Serif" SIZE=2>Chunjae Ko<BR>
Hynix Semiconductors<BR>
Manager, Investor Relations<BR>
Tel: +82.2.3459.3641<BR>
Fax: +82.2.3459.3647<BR>
Email: chunjae.ko@hynix.com  </FONT></P>




<!-- *************************************************************************** -->
<!-- MARKER PAGE="sheet: 6; page: 6" -->
<HR SIZE=5 COLOR=GRAY NOSHADE>



<!-- MARKER FORMAT-SHEET="Head Major Center Bold-TNR" FSL="Project" -->
<H1 ALIGN=CENTER><FONT FACE="Times New Roman, Times, Serif" SIZE=2>SIGNATURES </FONT></H1>

<!-- MARKER FORMAT-SHEET="Para Large Indent Lv 0-TNR" FSL="Default" -->
<P><FONT FACE="Times New Roman, Times, Serif" SIZE=2>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;Pursuant
to the requirements of the Securities Exchange Act of 1934, STMicroelectronics N.V. has
duly caused this report to be signed on its behalf by the undersigned, thereunto duly
authorized. </FONT></P>

<TABLE WIDTH="100%" CELLPADDING="0" CELLSPACING="0">
<TR VALIGN="Bottom" ALIGN="Left">
     <TH><FONT SIZE="2"></FONT></TH>
     <TH COLSPAN="2"><FONT SIZE="2" FACE="Times New Roman" COLOR="Black"></FONT></TH></TR>
<TR VALIGN="TOP">
     <TD WIDTH="50%"><FONT FACE="Times New Roman, Times, Serif" SIZE="2">&nbsp;</FONT></TD>
     <TD WIDTH="7%"><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT></TD>
     <TD WIDTH="43%"><FONT FACE="Times New Roman, Times, Serif" SIZE="2"><B>STMicroelectronics N.V.</B></FONT></TD></TR>
<TR>
      <TD> &nbsp;</TD>
      <TD> </TD>
      <TD> </TD></TR>
<TR VALIGN="TOP">
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Date:&nbsp;&nbsp;November 17, 2004</FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">By: <U>/s/ PASQUALE PISTORIO&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;</U></FONT></TD></TR>
<TR>
      <TD> &nbsp;</TD>
      <TD> </TD>
      <TD> </TD></TR>
<TR VALIGN="TOP">
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Name:</FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Pasquale Pistorio</FONT>
<FONT FACE="Times New Roman, Times, Serif" SIZE="2">   <BR>  </FONT></TD></TR>
<TR VALIGN="TOP">
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2"></FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">Title:</FONT></TD>
     <TD><FONT FACE="Times New Roman, Times, Serif" SIZE="2">President and Chief Executive Officer</FONT></TD></TR>
</TABLE>
<BR><BR>

<!-- MARKER FORMAT-SHEET="Para Flush Lv 0-TNR" FSL="Project" -->
<P><FONT FACE="Times New Roman, Times, Serif" SIZE=2>Enclosures:  A press release
dated November 16, 2004 announcing that Hynix and STMicroelectronics have signed a
joint-venture agreement to build a front-end memory manufacturing plant in China.</FONT>
<BR>

<BR>

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