<SEC-DOCUMENT>0000947871-25-000351.txt : 20250401
<SEC-HEADER>0000947871-25-000351.hdr.sgml : 20250401
<ACCEPTANCE-DATETIME>20250401161545
ACCESSION NUMBER:		0000947871-25-000351
CONFORMED SUBMISSION TYPE:	6-K
PUBLIC DOCUMENT COUNT:		3
CONFORMED PERIOD OF REPORT:	20250401
FILED AS OF DATE:		20250401
DATE AS OF CHANGE:		20250401

FILER:

	COMPANY DATA:	
		COMPANY CONFORMED NAME:			STMicroelectronics N.V.
		CENTRAL INDEX KEY:			0000932787
		STANDARD INDUSTRIAL CLASSIFICATION:	SEMICONDUCTORS & RELATED DEVICES [3674]
		ORGANIZATION NAME:           	04 Manufacturing
		EIN:				000000000
		STATE OF INCORPORATION:			P7
		FISCAL YEAR END:			1231

	FILING VALUES:
		FORM TYPE:		6-K
		SEC ACT:		1934 Act
		SEC FILE NUMBER:	001-13546
		FILM NUMBER:		25799850

	BUSINESS ADDRESS:	
		STREET 1:		WTC SCHIPHOL AIRPORT
		STREET 2:		SCHIPHOL BOULEVARD 265
		CITY:			SCHIPHOL AIRPORT
		STATE:			P7
		ZIP:			1118BH
		BUSINESS PHONE:		0031 20 654 3210

	MAIL ADDRESS:	
		STREET 1:		WTC SCHIPHOL AIRPORT
		STREET 2:		SCHIPHOL BOULEVARD 265
		CITY:			SCHIPHOL AIRPORT
		STATE:			P7
		ZIP:			1118BH

	FORMER COMPANY:	
		FORMER CONFORMED NAME:	STMICROELECTRONICS NV
		DATE OF NAME CHANGE:	19980626

	FORMER COMPANY:	
		FORMER CONFORMED NAME:	SGS THOMSON MICROELECTRONICS NV
		DATE OF NAME CHANGE:	19950310
</SEC-HEADER>
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<TYPE>6-K
<SEQUENCE>1
<FILENAME>ss4649533_6k.htm
<DESCRIPTION>REPORT OF FOREIGN PRIVATE ISSUER
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<P STYLE="font: bold 10pt Times New Roman, Times, Serif; margin: 4.55pt 18.6pt 0 20.7pt; text-align: center; color: #231F20"><FONT STYLE="letter-spacing: -0.4pt">UNITED
</FONT> <FONT STYLE="letter-spacing: -0.1pt">STATES</FONT></P>

<P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 0.5pt 18.6pt 0 20.8pt; text-align: center; color: #231F20"><FONT STYLE="letter-spacing: -0.4pt"><B>SECURITIES
AND EXCHANGE COMMISSION</B></FONT></P>

<P STYLE="font: bold 10pt Times New Roman, Times, Serif; margin: 0.5pt 18.6pt 0 21.1pt; text-align: center; text-indent: 0in; color: #231F20"><FONT STYLE="letter-spacing: -0.1pt">Washington,
D.C. 20549</FONT></P>

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<P STYLE="font: 18pt Times New Roman, Times, Serif; margin: 12pt 0 10pt; text-align: center"><B>FORM&nbsp;6&#45;K</B></P>

<P STYLE="font: 12pt/103% Times New Roman, Times, Serif; margin: 12.9pt 18.6pt 0 21.15pt; text-align: center; color: #231F20"><FONT STYLE="letter-spacing: -0.1pt"><B>REPORT
OF FOREIGN PRIVATE ISSUER PURSUANT TO RULE 13a-16 OR 15d-16 UNDER THE </B></FONT><B>SECURITIES EXCHANGE ACT OF 1934</B></P>

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<P STYLE="font: 10pt/208% Times New Roman, Times, Serif; margin: 0 15.35pt 0 8.25pt; text-align: center; color: #231F20"><B>For the month
of April, 2025 </B></P>

<P STYLE="font: 10pt/208% Times New Roman, Times, Serif; margin: 0 15.35pt 0 8.25pt; text-align: center; color: #231F20"><B>Commission
File Number: 1-13546</B></P>

<P STYLE="font: 10pt/208% Times New Roman, Times, Serif; margin: 0 15.35pt 0 8.25pt; text-align: center"><B>&nbsp;</B></P>

<P STYLE="font: 18pt Times New Roman, Times, Serif; margin: 0.25pt 0 0; text-align: center"><B>STMicroelectronics N.V.</B></P>

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<P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 12pt 18.6pt 0 21.05pt; text-align: center; color: #231F20"><FONT STYLE="letter-spacing: -0.1pt">(Name
of Registrant)</FONT></P>

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<P STYLE="font: 11pt Times New Roman, Times, Serif; margin: 12pt 0 0; text-align: center">WTC Schiphol Airport<BR>
Schiphol Boulevard 265<BR>
1118 BH Schiphol Airport<BR>
The Netherlands</P>

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<P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 12pt 18.6pt 0 21.05pt; text-align: center; color: #231F20"><FONT STYLE="letter-spacing: -0.1pt">(Address
of Principal Executive Offices)</FONT></P>

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<P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 0 0 12pt 7.1pt; text-align: justify">&nbsp;</P>

<P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 0 0 12pt 7.1pt; text-align: justify">Indicate by check mark whether the registrant
files or will file annual reports under cover of Form&nbsp;20&#45;F or Form&nbsp;40&#45;F:</P>

<P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 0 0 10pt; text-align: center">Form&nbsp;20&#45;F &#9746;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&#9;Form&nbsp;40&#45;F
&#9744;</P>

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<P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 0 0 10pt 7.1pt; text-align: justify">Enclosure: A press release dated March
31, 2025, announcing the signing of a GaN technology development and manufacturing agreement between STMicroelectronics and Innoscience.</P>

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<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin: 0">&nbsp;</P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin: 0">&nbsp;</P>

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<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin: 0">&nbsp;</P>

<P STYLE="font: 10pt/115% Arial, Helvetica, Sans-Serif; text-align: center; margin-top: 0; margin-bottom: 12pt"><FONT STYLE="font-family: Arial, Helvetica, Sans-Serif; font-size: 11pt"><B>STMicroelectronics
and Innoscience sign GaN technology<BR>
development and manufacturing agreement</B></FONT></P>

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<TD STYLE="width: 23.95pt"></TD><TD STYLE="width: 18pt"><FONT STYLE="font-family: Symbol">&middot;</FONT></TD><TD><I>Joint Development Agreement (JDA) on GaN technology to build the future in power electronics for AI datacenters, renewable energy
generation and storage, cars and more</I></TD></TR></TABLE>

<TABLE CELLPADDING="0" CELLSPACING="0" WIDTH="100%" STYLE="font: 10pt/111% Arial, Helvetica, Sans-Serif; margin-top: 0; margin-bottom: 0"><TR STYLE="vertical-align: top">
<TD STYLE="width: 23.95pt"></TD><TD STYLE="width: 18pt"><FONT STYLE="font-family: Symbol; font-size: 10pt; line-height: 111%">&middot;</FONT></TD><TD STYLE="padding-right: 32.6pt"><I>Innoscience can make use of manufacturing capacity of ST in Europe while ST can leverage manufacturing
capacity at Innoscience in China</I></TD></TR></TABLE>

<P STYLE="font: 10pt/115% Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-bottom: 0">Geneva and Suzhou, March 31<SUP>st</SUP>, 2025
&#8211; <B>STMicroelectronics (NYSE: STM), </B>a global semiconductor leader serving customers across the spectrum of electronics applications,
and <B>Innoscience (HKEX:02577.HK)</B>, the world leader in 8&#8221; GaN-on-Si (gallium nitride on silicon) high-performance low-cost
manufacturing, announce the signature of an agreement on GaN technology development and manufacturing, leveraging the strengths of each
company to enhance GaN power solutions and supply chain resilience.</P>

<P STYLE="font: 10pt/115% Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-right: 2.6pt; margin-bottom: 0">The companies have agreed on a joint development
initiative on GaN power technology, to advance the promising future of GaN power for consumer electronics, datacenters, automotive and
industrial power systems and many more applications in the coming years. In addition, the agreement allows Innoscience to utilize ST&#8217;s
front-end manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience&#8217;s front-end manufacturing capacity
in China for its own GaN wafers. The common ambition is for each company to expand their individual offering in GaN with supply chain
flexibility and resilience to cover all customers&#8217; requirements in a wide range of applications.</P>

<P STYLE="font: 10pt/115% Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-bottom: 0">Marco Cassis, President, Analog, Power &amp; Discrete,
MEMS and Sensors of STMicroelectronics declared: &#8220;<I>ST and Innoscience are both Integrated Device Manufacturers, and with this
agreement we will leverage this model to the benefit of our customers globally. First, ST will be accelerating its roadmap in GaN power
technology to complement its silicon and silicon carbide offering. Second, ST will be able to leverage a flexible manufacturing model
to serve customers <FONT STYLE="letter-spacing: -0.1pt">globally.&#8221;</FONT></I></P>

<P STYLE="font: 10pt/115% Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-bottom: 0">Dr. Weiwei Luo, Chairman and Founder of Innoscience,
stated <I>&#8220;GaN technology is essential to improve electronics, creating smaller and more efficient systems which save electric power,
lower cost, and reduce CO<FONT STYLE="font-size: 10pt; line-height: 115%">2</FONT> Emissions. Innoscience pioneered mass production of
8-inch GaN technology and has shipped over 1 billion GaN devices into multiple markets, and we are very excited to move into strategic
collaboration with ST. The joint collaboration between ST and Innoscience will further expand and accelerate the adoption of GaN technology.
Together the teams at Innoscience and ST will develop the next generations of GaN technology&#8221;.</I></P>

<P STYLE="font: 10pt/115% Arial, Helvetica, Sans-Serif; margin: 7.95pt 3.9pt 0 5.95pt"><I>&nbsp;</I></P>

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<P STYLE="font: 10pt/115% Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-bottom: 0">GaN power devices leverage fundamental material properties
that enable new standards of system performance in power conversion, motion control, and actuation, offering significantly lower losses,
which allows for enhanced efficiency, smaller size, and lighter weight, thus reducing the overall solution cost and carbon footprint;
these devices are rapidly being adopted in consumer electronics, data center and industrial power supplies, and solar inverters, and are
being actively designed into next-generation EV powertrains due to their substantial size and weight reduction benefits.</P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-right: 0; margin-bottom: 0"><B>About <FONT STYLE="letter-spacing: -0.1pt">STMicroelectronics</FONT></B></P>

<P STYLE="font: 10pt/115% Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-right: 2.6pt; margin-bottom: 0">At ST, we are 50,000
creators and makers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities.
An integrated device manufacturer, we work with more than 200,000 customers and thousands of partners to design and build products, solutions,
and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world. Our technologies enable
smarter mobility, more efficient power and energy management, and the wide-scale deployment of cloud-connected autonomous things. We
are on track to be carbon neutral in all direct and indirect emissions (scopes 1 and 2), product transportation, business travel, and
employee commuting emissions (our scope 3 focus), and to achieve our 100% renewable electricity sourcing goal by the end of 2027. Further
information can be found at <U>www.st.com</U>.</P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-right: 0; margin-bottom: 0"><B>About <FONT STYLE="letter-spacing: -0.1pt">Innoscience</FONT></B></P>

<P STYLE="font: 10pt/115% Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-right: 2.6pt; margin-bottom: 0">Innoscience (HKEX:02577.HK)
is the global leader in gallium nitride process innovation and power device manufacturing. Innoscience&#8217;s device design and performance
set the worldwide standard for GaN, and the culture of continuous improvement will accelerate GaN performance and market adoption. The
company&#8217;s gallium nitride products are used in multiple low, medium and high voltage applications, with GaN process nodes covering
15V to 1200V. Wafers, discrete devices, integrated power ICs, and modules provide customers with robust GaN solutions. With 800 patents
granted or pending, Innoscience&#8217;s products are known for reliability, performance, and functionality within the fields of consumer
electronics, automotive electronics, data centers, renewable energy and industrial power. Innoscience creates a bright future for GaN.
Please visit <U>www.innoscience.com</U> for more information.</P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-right: 0; margin-bottom: 0"><FONT STYLE="letter-spacing: -0.1pt"><B>Contacts</B></FONT></P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin: 0"><B>&nbsp;</B></P>

<P STYLE="font: 10pt/12.6pt Arial, Helvetica, Sans-Serif; margin-top: 0.05pt; margin-right: 0; margin-bottom: 0"><B>Media <FONT STYLE="letter-spacing: -0.1pt">Relations</FONT></B></P>

<P STYLE="font: 10pt/12.6pt Arial, Helvetica, Sans-Serif; margin-top: 0; margin-right: 0; margin-bottom: 0">Alexis <FONT STYLE="letter-spacing: -0.1pt">Breton</FONT></P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 0.05pt; margin-bottom: 0">Group VP Corporate External Communications</P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 0.05pt; margin-bottom: 0">Tel: +33.6.59.16.79.08</P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 0; margin-right: 0; margin-bottom: 0"><FONT STYLE="letter-spacing: -0.1pt">alexis.breton@st.com</FONT></P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 12pt; margin-right: 0; margin-bottom: 0"><B>Investor <FONT STYLE="letter-spacing: -0.1pt">Relations</FONT></B></P>

<P STYLE="font: 10pt/normal Arial, Helvetica, Sans-Serif; margin-top: 0.1pt; margin-right: 0; margin-bottom: 0">J&eacute;r&ocirc;me <FONT STYLE="letter-spacing: -0.1pt">Ramel</FONT></P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 0; margin-bottom: 0">EVP Corporate Development &amp; Integrated External Communication</P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 0; margin-bottom: 0">Tel: +41.22.929.59.20</P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin-top: 0; margin-right: 0; margin-bottom: 0"><FONT STYLE="letter-spacing: -0.1pt">jerome.ramel@st.com</FONT></P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin: 0 0 0 5.95pt"><FONT STYLE="letter-spacing: -0.1pt">&nbsp;</FONT></P>

<P STYLE="font: 10pt Arial, Helvetica, Sans-Serif; margin: 0 0 0 5.95pt"><FONT STYLE="letter-spacing: -0.1pt">&nbsp;</FONT>&nbsp;</P>



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<P STYLE="font: bold 10pt Times New Roman, Times, Serif; margin: 0 0 12pt; text-align: center">SIGNATURES</P>

<P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 0 0 12pt; text-align: justify; text-indent: 0in">Pursuant to the requirements
of the Securities Exchange Act of 1934, the registrant has duly caused this report to be signed on its behalf by the undersigned, thereunto
duly authorized.</P>

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    <TD STYLE="width: 5%">&nbsp;</TD>
    <TD STYLE="width: 53%">&nbsp;</TD>
    <TD STYLE="width: 8%">&nbsp;</TD>
    <TD STYLE="width: 34%"><FONT STYLE="font-size: 10pt"><B>STMicroelectronics N.V.</B></FONT></TD></TR>
  <TR STYLE="vertical-align: top">
    <TD>&nbsp;</TD>
    <TD>&nbsp;</TD>
    <TD>&nbsp;</TD>
    <TD>&nbsp;</TD></TR>
  <TR STYLE="vertical-align: top">
    <TD><FONT STYLE="font-size: 10pt">Date: </FONT></TD>
    <TD><FONT STYLE="font-size: 10pt">April 1, 2025</FONT></TD>
    <TD><FONT STYLE="font-size: 10pt">By:</FONT></TD>
    <TD STYLE="border-bottom: Black 1pt solid; padding-right: 19.3pt"><FONT STYLE="font-size: 10pt">&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;/s/ <FONT STYLE="font-variant: small-caps; background-color: white">Lorenzo Grandi</FONT></FONT></TD></TR>
  <TR STYLE="vertical-align: top">
    <TD>&nbsp;</TD>
    <TD>&nbsp;</TD>
    <TD>&nbsp;</TD>
    <TD>&nbsp;</TD></TR>
  <TR STYLE="vertical-align: top">
    <TD>&nbsp;</TD>
    <TD>&nbsp;</TD>
    <TD><FONT STYLE="font-size: 10pt">Name:</FONT></TD>
    <TD><FONT STYLE="font-size: 10pt; background-color: white">Lorenzo Grandi</FONT></TD></TR>
  <TR STYLE="vertical-align: top">
    <TD>&nbsp;</TD>
    <TD>&nbsp;</TD>
    <TD><FONT STYLE="font-size: 10pt">Title:</FONT></TD>
    <TD>
    <P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 0">Chief Financial Officer</P>
    <P STYLE="font: 10pt Times New Roman, Times, Serif; margin: 0">President, Finance, Purchasing, ERM and Resilience</P></TD></TR>
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end
</TEXT>
</DOCUMENT>
</SEC-DOCUMENT>
